GS66516B-E01-MR
Stock Availability: 0
| Manufacturer: | |
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| Mfg #: | GS66516B-E01-MR |
| Richardson RFPD #: | GS66516B-E01-MR |
| Description: | GaN Power Transistor |
| Min/Mult: | 250/1 |
| Datasheet |
GS66516B-E01-MR 
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| EDA/CAD Models |
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The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
GaN Systems has introduced the GS66516B-MR part number. This reflects a move to high volume production, with associated finalized production test limits and production test flow. This New Part Number will replace the GS66516B-E01-MR. The E0x and non-E0x are equivalent devices. They are tested to the same production test limits and have the same datasheet specifications.Datasheets
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