Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz.
Featuring a 900 V SiC MOSFET, it tops 1200 V SiC MOSFETs' switching performance and has a higher safety margin than 650 V MOSFETs. On top of that, the fastPACK 0 SiC module achieves greater efficiency than IGBTs (+8 % at a light load and +3 % at the full load).
And the fastPACK 0 SiC H-bridge is also the perfect solution when it comes to increasing power density for SMPS, charger and ESS applications ranging 2 - 4 kW.
With the benefit of this module, more than 30% savings can be achieved on the cost of the heat sink, magnetic components and bulk capacitors in applications with 100+ kHz switching frequencies. It also runs very efficiently at light loads to markedly increase SMPS's overall efficiency.
Main Features
- High frequency 900 V SiC MOS
- fsw up to 400 kHz
- Suitable for hard switching / soft switching
- Built in NTC
- flow 0 12 mm housing without clips
- H-Bridge with split output topology
- High efficient high speed SiC MOS
- Thermistor
Applications
