1011GN-125EP


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: 1011GN-125EP
Richardson RFPD #: 1011GN-125EP
Description: RF Power Amplifier Pallet
Min/Mult: 1
Datasheet 1011GN-125EP Data Sheet
EDA/CAD Models

The 1011GN-125EP is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed RF output power under several pulse formats, including mode-S ELM, across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. The hermetically sealed transistor is available in both the bolt-down flange 55-QQ package and the earless solder-down flange 55-QQP package styles, as well as mounted on a compact 50 Ohm IN/OUT pallet. Designed specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, the transistor devices utilize all-gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99.


Key Attributes Value Search Similar
Minimum Frequency (MHz) 1030
Maximum Frequency (MHz) 1090
P1dB (W) 125
Gain (dB) 18
Gain Flatness (dB)
Supply Voltage (V) 50
Dimensions (in) 1.2 in L x 0.6 in W x 0.15 in H

Stock

Request Quote for Lead Time

Quote Required



Please notify me when stock becomes available!