1012GN-800V


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: 1012GN-800V
Richardson RFPD #: 1012GN-800V
Description: RF Power Transistor
Min/Mult: 1
Datasheet 1012GN-800V Data Sheet
EDA/CAD Models

The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing over 19dB gain, 800 Watts of pulsed RF output power using 20us, 6% pulse format at 1025-1150MHz. The transistor has internal pre-match for optimal performance. This transistor is specifically designed for Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1025
Maximum Frequency (MHz) 1150
Pout (W) 800
Gain (dB) 19.3
Supply Voltage (V) 54
50 Ohm Matching
Test signal Pulsed
Pulse Width 20
Duty Cycle 6
Efficiency (%) 58
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.16
Package Name 55KR
Package Type Ceramic Flanged

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