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Product image for reference only. For precise specifications, refer to datasheet.
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing over 19dB gain, 800 Watts of pulsed RF output power using 20us, 6% pulse format at 1025-1150MHz. The transistor has internal pre-match for optimal performance. This transistor is specifically designed for Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
1012gn-800v-datasheet
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