2729GN-300V


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Manufacturer: Microchip
Mfg #: 2729GN-300V
Richardson RFPD #: 2729GN-300V
Description: RF Power Transistor
Min/Mult: 1
Datasheet 2729GN-300V Data Sheet
EDA/CAD Models

The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses all gold transistor metallization to provide highest reliability and superior ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 2900
Pout (W) 300
Gain (dB) 15.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 11
Efficiency (%) 58
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.37
Package Name 55-QP
Package Type Ceramic Flanged

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