A2I09VD030GNR1

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A2I09VD030GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I09VD030GNR1
Richardson RFPD #: A2I09VD030GNR1
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet A2I09VD030GNR1 Data Sheet
EDA/CAD Models

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 575
Maximum Frequency (MHz) 960
Gain (dB) 34.3
Gain Flatness (dB) 0.2
Efficiency (%) 19.8
Supply Voltage (V) 48
P1dB (dBm) 33.3
Psat (W) 40.5
PAvg (W) 4
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2I09VD030N Datasheet

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500:  $48.7500
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