A2I20H060NR1

Stock Availability: 340

A2I20H060NR1 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I20H060NR1
Richardson RFPD #: A2I20H060NR1
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet A2I20H060NR1 Data Sheet
EDA/CAD Models

The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1800
Maximum Frequency (MHz) 2200
Gain (dB) 28.9
Gain Flatness (dB) 0.3
Efficiency (%) 47.3
Supply Voltage (V) 28
P1dB (dBm) 48
Psat (W)
PAvg (W)
Package Type Plastic

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2I20H060N

Stock

 Ready for Immediate Shipment
Stock: 340 Units

Order

 Pricing in (USD)
Unit Price:
1:  $105.2100
10:  $100.7000
25:  $97.9100
50:  $95.0000
100:  Get Quote