A2I35H060NR1

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A2I35H060NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2I35H060NR1
Richardson RFPD #: A2I35H060NR1
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet A2I35H060NR1 Data Sheet
EDA/CAD Models

The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 3400
Maximum Frequency (MHz) 3800
Gain (dB) 24.6
Gain Flatness (dB) 0.4
Efficiency (%) 29.9
Supply Voltage (V) 28
P1dB (dBm) 48
Psat (W) 65
PAvg (W) 10
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2I35H060N

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