A2T08VD020NT1

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A2T08VD020NT1 NXP Semiconductors
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Manufacturer: NXP Semiconductors
Mfg #: A2T08VD020NT1
Richardson RFPD #: A2T08VD020NT1
Description: RF Power Transistor
Min/Mult: 1,000/1
Datasheet A2T08VD020NT1 Data Sheet
EDA/CAD Models

This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 960
Pout (W) 2
Gain (dB) 19.1
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 21.1
P1dB (W) 18.6
Psat (W) 21.9
Thermal Resistance (°C/W) 3.7
Package Name 8x8 PQFN
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2T08VD020N

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1000:  $27.1600
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