A2T09VD250NR1

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A2T09VD250NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2T09VD250NR1
Richardson RFPD #: A2T09VD250NR1
Description: RF Power Transistor
Min/Mult: 500/1
Datasheet A2T09VD250NR1 Data Sheet
EDA/CAD Models

This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 716
Maximum Frequency (MHz) 960
Pout (W) 65
Gain (dB) 22.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 34.8
P1dB (W) 240
Psat (W) 326
Thermal Resistance (°C/W) 0.56
Package Name TO-270WB-6A
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

Datasheets

  A2T09VD250N

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