A2T14H450-23NR6

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A2T14H450-23NR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2T14H450-23NR6
Richardson RFPD #: A2T14H450-23NR6
Description: RF Power Transistor
Min/Mult: 150/1
Datasheet A2T14H450-23NR6 Data Sheet
EDA/CAD Models

This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1452
Maximum Frequency (MHz) 1511
Pout (W) 93
Gain (dB) 19
Supply Voltage (V) 31
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 48.7
P1dB (W)
Psat (W) 560
Thermal Resistance (°C/W) 0.27
Package Name OM-1230-4L2S
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

Datasheets

  A2T14H450-23N Datasheet

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