A2V09H300-04NR3

Stock Availability: 0

A2V09H300-04NR3 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A2V09H300-04NR3
Richardson RFPD #: A2V09H300-04NR3
Description: RF Power Transistor
Datasheet A2V09H300-04NR3 Data Sheet
EDA/CAD Models

This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 720
Maximum Frequency (MHz) 960
Pout (W) 79
Gain (dB) 19.7
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 55.9
P1dB (W) 223
Psat (W) 400
Thermal Resistance (°C/W) 0.34
Package Name OM-780-4L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A2V09H300-04N

Stock

 Request Quote for Lead Time
Min/Mult: 250/1

Quote Required


Please notify me when stock becomes available!