A3G26D055N-100
Stock Availability: 1
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | A3G26D055N-100 |
| Richardson RFPD #: | A3G26D055N-100 |
| Description: | RF Transistor Test Fixture |
| Min/Mult: | 1 |
| Datasheet |
A3G26D055N-100 
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| EDA/CAD Models |
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The A3G26D055N-100 is an orderable reference design for A3G26D055NT4. The A3G26D055NT4 is a 100-2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 x 6.5mm over-molded plastic package. It has an unmatched output allowing for wide frequency range utilization. The A3G26D055N-100 circuit optimizes the device from 100-2500MHz band, with 12W CW and 11dB gain by utilizing half of the device. The circuit is available for order and the circuit information is available from NXP via license.
Datasheets