A3G26D055NT4

Stock Availability: 370

A3G26D055NT4 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3G26D055NT4
Richardson RFPD #: A3G26D055NT4
Description: RF Power Transistor
Min/Mult: 1
Datasheet A3G26D055NT4 Data Sheet
EDA/CAD Models

This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF Energy and tactical communications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 100
Maximum Frequency (MHz) 2690
Pout (W) 8
Gain (dB) 18
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 54.1
P1dB (W)
Psat (W) 55
Thermal Resistance (°C/W) 3.7
Package Name DFN
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

Datasheets

  A3G26D055N Datasheet

Stock

 Ready for Immediate Shipment
Stock: 370 Units

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 Pricing in (USD)
Unit Price:
1:  $110.8700
10:  $106.1200
25:  $103.1700
50:  $100.1100
100:  Get Quote