A3I25D080GNR1
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | A3I25D080GNR1 |
| Richardson RFPD #: | A3I25D080GNR1 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 500/500 |
| Datasheet |
A3I25D080GNR1 
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| EDA/CAD Models |
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The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.