A3I25D080GNR1

Stock Availability: 0

A3I25D080GNR1 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3I25D080GNR1
Richardson RFPD #: A3I25D080GNR1
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet A3I25D080GNR1 Data Sheet
EDA/CAD Models

The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2300
Maximum Frequency (MHz) 2690
Gain (dB) 29.2
Gain Flatness (dB) 0.3
Efficiency (%) 35.6
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 85
PAvg (W) 8.3
Package Type Surface Mount

Change Notice

  NXP_PCN_202504006I

Datasheets

  A3I25D080N

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
1:  $79.5300


Please notify me when stock becomes available!