A3M36SL039IAAT2


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3M36SL039IAAT2
Richardson RFPD #: A3M36SL039IAAT2
Description: RF & MW Power Amplifier
Min/Mult: 2,000/1
Datasheet A3M36SL039IAAT2 Data Sheet
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The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 3400
Maximum Frequency (MHz) 3800
Gain (dB) 29.8
Gain Flatness (dB) 0.5
Efficiency (%) 38.3
Supply Voltage (V) 29
P1dB (dBm)
Psat (W) 60
PAvg (W) 8
Package Type Surface Mount

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