A3T21H456W23SR6

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A3T21H456W23SR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3T21H456W23SR6
Richardson RFPD #: A3T21H456W23SR6
Description: RF Power Transistor
Min/Mult: 1
Datasheet A3T21H456W23SR6 Data Sheet
EDA/CAD Models

This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2110
Maximum Frequency (MHz) 2200
Pout (W) 87
Gain (dB) 14.8
Supply Voltage (V) 30
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 49.5
P1dB (W)
Psat (W) 562
Thermal Resistance (°C/W) 0.14
Package Name ACP-1230S-4L2S
Package Type Ceramic Flangeless

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

Datasheets

  A3T21H456W23S

Stock

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