A3V07H600-42NR6

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A3V07H600-42NR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A3V07H600-42NR6
Richardson RFPD #: A3V07H600-42NR6
Description: RF Power Transistor
Min/Mult: 150/1
Datasheet A3V07H600-42NR6 Data Sheet
EDA/CAD Models

This 112 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 616 to 870 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 616
Maximum Frequency (MHz) 870
Pout (W) 112
Gain (dB) 16.9
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 49.5
P1dB (W)
Psat (W) 794
Thermal Resistance (°C/W) 0.28
Package Name OM-1230-6L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

Datasheets

  A3V07H600-42NR6

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