A5G18H610W19NR3

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A5G18H610W19NR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G18H610W19NR3
Richardson RFPD #: A5G18H610W19NR3
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet A5G18H610W19NR3 Data Sheet
EDA/CAD Models

The A5G18H610W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. The A5G18H610W19 has high terminal impedances for optimal broadband performance and improved linearized error vector magnitude with next generation 5G signals. The A5G18H610W19N is able to withstand extremely high level output VSWR and broadband operating conditions.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 1880
Pout (W) 85
Gain (dB) 17.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 55.6
P1dB (W)
Psat (W) 624
Thermal Resistance (°C/W) 0.8
Package Name OM-780-4S4S
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A5G18H610W19N

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