A5G19H605W19NR3

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A5G19H605W19NR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G19H605W19NR3
Richardson RFPD #: A5G19H605W19NR3
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet A5G19H605W19NR3 Data Sheet
EDA/CAD Models

The A5G19H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. The A5G19H605W19N has high terminal impedances for optimal broadband performance and improved linearized error vector magnitude with next generation 5G signals. The A5G19H605W19N is able to withstand extremely high output VSWR and broadband operating conditions.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1930
Maximum Frequency (MHz) 1995
Pout (W) 85
Gain (dB) 16.7
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 55.1
P1dB (W)
Psat (W) 624
Thermal Resistance (°C/W) 0.61
Package Name OM-780-4S4S
Package Type Plastic Flangeless

Datasheets

  A5G19H605W19N

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