A5G21H605W19NR3

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A5G21H605W19NR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G21H605W19NR3
Richardson RFPD #: A5G21H605W19NR3
Description: RF Power Transistor
Min/Mult: 1
Datasheet A5G21H605W19NR3 Data Sheet
EDA/CAD Models

The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 2110 to 2200 MHz band.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2110
Maximum Frequency (MHz) 2200
Pout (W) 85
Gain (dB) 16.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 57.6
P1dB (W)
Psat (W) 676
Thermal Resistance (°C/W) 0.8
Package Name OM-780-4S4S
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A5G21H605W19NR3

Stock

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Unit Price: Pricing in (USD)
1:  $199.8600
10:  $191.2900
25:  $185.9800
50:  $180.4700
100:  Get Quote


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