A5G21H605W19NR3
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | A5G21H605W19NR3 |
| Richardson RFPD #: | A5G21H605W19NR3 |
| Description: | RF Power Transistor |
| Min/Mult: | 250/250 |
| Datasheet |
A5G21H605W19NR3 
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| EDA/CAD Models |
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The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 2110 to 2200 MHz band.