A5G23H065NT4


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G23H065NT4
Richardson RFPD #: A5G23H065NT4
Description: RF Power Transistor
Min/Mult: 2,500/2500
Datasheet A5G23H065NT4 Data Sheet
EDA/CAD Models

This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2300
Maximum Frequency (MHz) 2400
Pout (W) 8.8
Gain (dB) 17.3
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 60.2
P1dB (W)
Psat (W) 63
Thermal Resistance (°C/W) 3.9
Package Name DFN7x6.5
Package Type Plastic SMT

Datasheets

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Unit Price: Pricing in (USD)
2500:  $27.6900

Must order in multiple of 2500

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Unit Price: Pricing in (USD)
2500:  $28.3700