A5G26H110NT4


Stock Availability: 977

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G26H110NT4
Richardson RFPD #: A5G26H110NT4
Description: RF Power Transistor
Min/Mult: 1
Datasheet A5G26H110NT4 Data Sheet
EDA/CAD Models

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Pout (W) 15
Gain (dB) 16.2
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 57.1
P1dB (W)
Psat (W) 62
Thermal Resistance (°C/W) 1.8
Package Name DFN7x6.5
Package Type Plastic SMT

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Unit Price:
1:  $65.3500
10:  $62.5500
25:  $60.8100
50:  $59.0100
100:  Get Quote