A5G26S004NT6

Stock Availability: 197

A5G26S004NT6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G26S004NT6
Richardson RFPD #: A5G26S004NT6
Description: RF Power Transistor
Min/Mult: 1
Datasheet A5G26S004NT6 Data Sheet
EDA/CAD Models

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Pout (W) 0.25
Gain (dB) 19.6
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 20.5
P1dB (W)
Psat (W) 5.5
Thermal Resistance (°C/W) 9.5
Package Name DFN4.5x4
Package Type Plastic SMT

Other Attributes Value
Gain (dB) 19.6
Maximum Frequency (MHz) 2690
Minimum Frequency (MHz) 2496
Efficiency (%) 20.5
Supply Voltage (V) 48
Technology GaN
Test signal W-CDMA
Thermal Resistance (°C/W) 9.5
Package Name DFN4.5x4
Pout (W) 0.25

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G26S004NT6

Stock

 Ready for Immediate Shipment
Stock: 197 Units

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 Pricing in (USD)
Unit Price:
1:  $49.0800
10:  $47.5700
25:  $46.1600
50:  $44.1800
100:  Get Quote