A5G35H120NT2

Stock Availability: 0

A5G35H120NT2 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G35H120NT2
Richardson RFPD #: A5G35H120NT2
Description: RF Power Transistor
Min/Mult: 2,000/1
Datasheet A5G35H120NT2 Data Sheet
EDA/CAD Models

This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 3700
Pout (W) 18
Gain (dB) 15.6
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 56.5
P1dB (W)
Psat (W) 117
Thermal Resistance (°C/W) 2
Package Name DFN7x10
Package Type Plastic SMT

Other Attributes Value
Gain (dB) 15.6
Maximum Frequency (MHz) 3700
Minimum Frequency (MHz) 3300
Efficiency (%) 56.5
Supply Voltage (V) 48
Technology GaN
Test signal W-CDMA
Thermal Resistance (°C/W) 2
Package Name DFN7x10
Pout (W) 18

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G35H120NT2

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
1:  $115.1900


Please notify me when stock becomes available!