A5G35H120NT2
Stock Availability: 0
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | A5G35H120NT2 |
| Richardson RFPD #: | A5G35H120NT2 |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
A5G35H120NT2 
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| EDA/CAD Models |
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This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
| Other Attributes | Value |
|---|---|
| Gain (dB) | 15.6 |
| Maximum Frequency (MHz) | 3700 |
| Minimum Frequency (MHz) | 3300 |
| Efficiency (%) | 56.5 |
| Supply Voltage (V) | 48 |
| Technology | GaN |
| Test signal | W-CDMA |
| Thermal Resistance (°C/W) | 2 |
| Package Name | DFN7x10 |
| Pout (W) | 18 |
Datasheets
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