A5G35S004NT6

Stock Availability: 135

A5G35S004NT6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G35S004NT6
Richardson RFPD #: A5G35S004NT6
Description: RF Power Transistor
Min/Mult: 1
Datasheet A5G35S004NT6 Data Sheet
EDA/CAD Models

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 500
Maximum Frequency (MHz) 5800
Pout (W) 0.28
Gain (dB) 18.1
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 23.8
P1dB (W)
Psat (W) 4.6
Thermal Resistance (°C/W) 8.9
Package Name DFN4.5x4
Package Type Plastic SMT

Other Attributes Value
Gain (dB) 18.1
Maximum Frequency (MHz) 5800
Minimum Frequency (MHz) 500
Efficiency (%) 23.8
Supply Voltage (V) 48
Technology GaN
Test signal W-CDMA
Thermal Resistance (°C/W) 8.9
Package Name DFN4.5x4
Pout (W) 0.28

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

Datasheets

  A5G35S004NT6

Stock

 Ready for Immediate Shipment
Stock: 135 Units

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 Pricing in (USD)
Unit Price:
1:  $34.0000
10:  $32.9600
25:  $31.9700
50:  $30.6000
100:  Get Quote