A5G35S008NT6

A5G35S008NT6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5G35S008NT6
Richardson RFPD #: A5G35S008NT6
Description: RF Power Transistor
Min/Mult: 5,000/5000
Datasheet A5G35S008NT6 Data Sheet
EDA/CAD Models

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 3800
Pout (W) 0.75
Gain (dB) 20.2
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 17.9
P1dB (W)
Psat (W) 10
Thermal Resistance (°C/W) 7.9
Package Name DFN4.5x4
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202502008F01

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  A5G35S008NT6

Full Reel

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
5000:  $16.4000

Must order in multiple of 5000

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 Request Quote for Lead Time
Unit Price: Pricing in (USD)
5000:  $16.8100