A5M20TG042T1
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | A5M20TG042T1 |
| Richardson RFPD #: | A5M20TG042T1 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1,000/1000 |
| Datasheet |
A5M20TG042T1 
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| EDA/CAD Models |
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Airfast Power Amplifier Module
The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems.
Features and benefits
- 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Reduced memory effects for improved linearized error vector magnitude
- Simultaneous dual band operation (B3–B1/B66)