A5M20TG042T1


Stock Availability: 905

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5M20TG042T1
Richardson RFPD #: A5M20TG042T1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1
Datasheet A5M20TG042T1 Data Sheet
EDA/CAD Models

Airfast Power Amplifier Module

The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems.

Features and benefits

  • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Reduced memory effects for improved linearized error vector magnitude
  • Simultaneous dual band operation (B3–B1/B66)

Key Attributes Value Search Similar
Technology GaN, LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 2200
Gain (dB) 48.1
Gain Flatness (dB)
Efficiency (%) 40.9
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 125.89
PAvg (W) 16
Package Type Surface Mount

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1:  $316.5200