A5M35TG140-TCT1

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A5M35TG140-TCT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: A5M35TG140-TCT1
Richardson RFPD #: A5M35TG140-TCT1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1
Datasheet A5M35TG140-TCT1 Data Sheet
EDA/CAD Models

The A5M35TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN on SiC power amplifiers are designed for TDD LTE and 5G systems.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3400
Maximum Frequency (MHz) 3600
Gain (dB) 30.5
Gain Flatness (dB) 0.1
Efficiency (%) 47.5
Supply Voltage (V) 48
P1dB (dBm)
Psat (W) 87.1
PAvg (W) 10.5
Package Type Surface Mount

Change Notice

  NXP_PCN_202502008F01

Datasheets

  a5m35tg140-tc

Supplier Documentation

  Top Side Cooling RF Modules Fact Sheet

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1:  $224.2000


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