AFT09MS007NT1

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AFT09MS007NT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT09MS007NT1
Richardson RFPD #: AFT09MS007NT1
Description: RF Power Transistor
Min/Mult: 1,000/1
Datasheet AFT09MS007NT1 Data Sheet
EDA/CAD Models

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 136
Maximum Frequency (MHz) 941
Pout (W) 7.5
Gain (dB) 15.4
Supply Voltage (V) 7.5
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 56
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 1.1
Package Name PLD-1.5W
Package Type Plastic SMT

Application Notes

  Simple Method of Changing the Frequency Range of a Power Amplifier Circuit

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFT09MS007N

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1:  $10.3600


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