AFT20S015GNR1

Stock Availability: 0

AFT20S015GNR1 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT20S015GNR1
Richardson RFPD #: AFT20S015GNR1
Description: RF Power Transistor
Min/Mult: 500/1
Datasheet AFT20S015GNR1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 2700
Pout (W) 2.1
Gain (dB) 16
Supply Voltage (V) 28
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 23
P1dB (W) 16.2
Psat (W)
Thermal Resistance (°C/W) 4.2
Package Name TO-270-2 GULL
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFT20S015N

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
1:  $71.5800


Please notify me when stock becomes available!