AFT20S015GNR1

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AFT20S015GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT20S015GNR1
Richardson RFPD #: AFT20S015GNR1
Description: RF Power Transistor
Min/Mult: 1
Datasheet AFT20S015GNR1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 2700
Pout (W) 2.1
Gain (dB) 16
Supply Voltage (V) 28
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 23
P1dB (W) 16.2
Psat (W)
Thermal Resistance (°C/W) 4.2
Package Name TO-270-2 GULL
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

  NXP_PCN_202512006DN

Datasheets

  AFT20S015N

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