AFT27S006NT1


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT27S006NT1
Richardson RFPD #: AFT27S006NT1
Description: RF Power Transistor
Min/Mult: 1,000/1000
Datasheet AFT27S006NT1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 2700
Pout (W) 0.7586
Gain (dB) 22.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 20.2
P1dB (W) 6
Psat (W)
Thermal Resistance (°C/W) 3.4
Package Name PLD-1.5W
Package Type Plastic SMT

Datasheets

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Unit Price: Pricing in (USD)
1000:  $11.8100

Must order in multiple of 1000

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Unit Price: Pricing in (USD)
1000:  $12.1000