AFT27S010NT1

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AFT27S010NT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFT27S010NT1
Richardson RFPD #: AFT27S010NT1
Description: RF Power Transistor
Min/Mult: 1,000/1
Datasheet AFT27S010NT1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 2700
Pout (W) 1.26
Gain (dB) 21.7
Supply Voltage (V) 28
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%) 22.6
P1dB (W) 10
Psat (W)
Thermal Resistance (°C/W) 3.5
Package Name PLD-1.5W
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFT27S010N

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