AFV09P350-04GNR3

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AFV09P350-04GNR NXP Semiconductors
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Manufacturer: NXP Semiconductors
Mfg #: AFV09P350-04GNR3
Richardson RFPD #: AFV09P350-04GNR
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet AFV09P350-04GNR Data Sheet
EDA/CAD Models

RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 720
Maximum Frequency (MHz) 960
Pout (W) 100
Gain (dB) 19.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 48.5
P1dB (W) 200
Psat (W) 500
Thermal Resistance (°C/W) 0.45
Package Name OM-780G-4L
Package Type Plastic Gull Wing

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFV09P350-04N

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Unit Price:
250:  $317.3900
500:  Get Quote


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