AFV09P350-04NR3

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AFV09P350-04NR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFV09P350-04NR3
Richardson RFPD #: AFV09P350-04NR3
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet AFV09P350-04NR3 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 720
Maximum Frequency (MHz) 960
Pout (W) 100
Gain (dB) 19.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 49.5
P1dB (W) 200
Psat (W) 500
Thermal Resistance (°C/W) 0.45
Package Name OM-780-4L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504006I

Datasheets

  AFV09P350-04N

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