AFV10700HR5


Stock Availability: 32

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: AFV10700HR5
Richardson RFPD #: AFV10700HR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet AFV10700HR5 Data Sheet
EDA/CAD Models

This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This device is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1030
Maximum Frequency (MHz) 1090
Pout (W) 730
Gain (dB) 19.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 58.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.03
Package Name NI-780H-4L
Package Type Ceramic Flanged

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Unit Price:
1:  $1,846.8300
10:  $1,798.2300
25:  $1,752.1300
50:  $1,706.1800
100:  Get Quote