APT25GN120B2DQ2G

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APT25GN120B2DQX Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT25GN120B2DQ2G
Richardson RFPD #: APT25GN120B2DQX
Description: Power IGBT Transistor
Min/Mult: 60/1
Datasheet APT25GN120B2DQX Data Sheet
EDA/CAD Models

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.

Key Attributes Value Search Similar
Configuration IGBT + Diode
Voltage (V) 1200
Current (A) 67
Package Type T-Max™

Change Notice

  Microchip Change Notice ASER-08CMEO630

Datasheets

  15635989-apt25gn120b2dq2-g-b-pdf

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Unit Price:
60:  $8.6900
100:  $8.5800
250:  Get Quote


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