APT75GP120JSC30


Stock Availability: 10

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: APT75GP120JSC30
Richardson RFPD #: APT75GP120JSC30
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 1
Datasheet APT75GP120JSC30 Data Sheet
EDA/CAD Models

1200 V, 60 A at 20 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, SOT-227

Features

  • Low conduction loss and saturation voltage
  • Low gate charge
  • Ultrafast tail current shutoff
  • No reverse recovery
  • High operating frequency
  • Reverse-bias safe operating area (RBSOA) rated
  • RoHS compliant
  • Isolated voltage to 2500 V, UL certified file E145592
  • Zero Eon switching loss from co-packaged, anti-parallel diode

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 75
Configuration IGBT/SiC Diode
Package Type SOT-227

Change Notice
Datasheets

Stock

Ready for Immediate Shipment

Stock: 10 Units

Unit Price: Pricing in (USD)
1:  $51.2100