C2M0160120D

The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature R_DS(on) of 160mΩ and maximum R_DS(on) at 150°C of 290mΩ are ideal for power conversion applications from 5-20kW. This product beats silicon IGBTs and MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system cost. Availability of a lower R_DS(on) version of the Gen2 SiC MOSFET line allows customers greater flexibility to optimize the price/performance advantage of our Z-FET devices.