C3M0032120D

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3^rd quadrant operation without the need for an additional external diode. The new family includes the lowest R_ds(on) at 1200V in a discrete package with a flat R_ds(on) over temperature. Wolfspeed has designed 3^rd generation MOSFETs with increased C_GS/C_GD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

• Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
• Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
• Easy to implement – MOSFET fully on at +15V gate drive
• High-speed switching with low output capacitance
• High blocking voltage with low R_DS(on)
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Easy to parallel and simple to drive

• Solar energy systems
• EV-Charging
• Uninterruptible power supply (UPS)
• SMPS
• Motor Control and Drives
• Energy storage