CAB320M17XM3

Features

• High Power Density Footprint
• High Junction Temperature (175 C) Operation
• Low Inductance (6.7 nH) Design
• Implements Wolfspeed’s Third Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate
• 1700V Drain-Source Voltage

Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
• 1700V VDS allows use with higher bus voltages (up to 1.4kV)

Applications

• Energy
• Medical
• Motor and Motion Control
• Test and Production Equipment
• Transportation
• Traction Inverters