CAB525F12XM3
Stock Availability: 50
| Manufacturer: | Wolfspeed |
|---|---|
| Mfg #: | CAB525F12XM3 |
| Richardson RFPD #: | CAB525F12XM3 |
| Description: | Silicon Carbide MOSFET Modules |
| Min/Mult: | 1 |
| Datasheet |
CAB525F12XM3 
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| EDA/CAD Models |
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Silicon Carbide, Half-Bridge Module
Technical Features
- High Power Density Footprint
- High Junction Temperature (175 C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Wolfspeed’s Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
- Advanced Direct Cooling Baseplate
Typical Applications
- Motor and Motion Control
- Vehicle Fast Chargers
- Uninterruptable Power Supplies
- Smart-Grid / Grid-Tied Distributed Generation
- Traction Drives
- E-mobility
System Benefits
- Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low-inductance design.
- Isolated, integrated temperature sensing enables high-level temperature protection.
- Dedicated high-side Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
