CAB525F12XM3

Silicon Carbide, Half-Bridge Module

Technical Features

• High Power Density Footprint
• High Junction Temperature (175 C) Operation
• Low-Inductance (6.7 nH) Design
• Implements Wolfspeed’s Third Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate
• Advanced Direct Cooling Baseplate

Typical Applications

• Motor and Motion Control
• Vehicle Fast Chargers
• Uninterruptable Power Supplies
• Smart-Grid / Grid-Tied Distributed Generation
• Traction Drives
• E-mobility

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low-inductance design.
• Isolated, integrated temperature sensing enables high-level temperature protection.
• Dedicated high-side Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.