CAS300M17BM2


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: CAS300M17BM2
Richardson RFPD #: CAS300M17BM2
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet CAS300M17BM2 Data Sheet
EDA/CAD Models

1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module

Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator

Benefits

  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Wolfspeed continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by C2M large-area SiC chip technology, the CAS300M17BM2 new half-bridge module exhibits an impressive 8-mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more.


Key Attributes Value Search Similar
Voltage (V) 1700
Current (A) 300
Configuration Half-bridge/SiC MOSFET/SiC diode
Package Type 62x106

Other Attributes Value
Rds(on) (mΩ) 8

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