CG2H40035F

Stock Availability: 0

CG2H40035F MACOM Technology Solutions
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CG2H40035F
Richardson RFPD #: CG2H40035F
Description: RF Power Transistor
Min/Mult: 70/1
Datasheet CG2H40035F Data Sheet
EDA/CAD Models

CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 35
Gain (dB) 14.3
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 64
P1dB (W)
Psat (W) 40
Thermal Resistance (°C/W) 3.4
Package Name
Package Type Ceramic Flanged

Datasheets

  cg2h40035

Stock

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
70:  $194.3600
100:  Get Quote


Please notify me when stock becomes available!