CG2H80060D-GP4

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CG2H80060D-GP4 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CG2H80060D-GP4
Richardson RFPD #: CG2H80060D-GP4
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CG2H80060D-GP4 Data Sheet
EDA/CAD Models

CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 8000
Pout (W) 60
Gain (dB) 15
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W) 60
Thermal Resistance (°C/W) 1.5
Package Name
Package Type Die

Datasheets

  cg2h80060d

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