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Product image for reference only. For precise specifications, refer to datasheet.
CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.
cgh21240f
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