CGH25120F

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CGH25120F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH25120F
Richardson RFPD #: CGH25120F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH25120F Data Sheet
EDA/CAD Models

CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2300
Maximum Frequency (MHz) 2700
Pout (W) 20
Gain (dB) 12.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal LTE
Pulse Width
Duty Cycle
Efficiency (%) 32
P1dB (W)
Psat (W) 130
Thermal Resistance (°C/W) 1.5
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh25120f

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