CGH31240F

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CGH31240F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH31240F
Richardson RFPD #: CGH31240F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH31240F Data Sheet
EDA/CAD Models

CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3100
Pout (W) 240
Gain (dB) 12
Supply Voltage (V) 28
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 300
Duty Cycle 20
Efficiency (%) 58
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.5
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh31240f

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