CGH35060P2

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CGH35060P2 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH35060P2
Richardson RFPD #: CGH35060P2
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet CGH35060P2 Data Sheet
EDA/CAD Models

CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3100
Maximum Frequency (MHz) 3500
Pout (W) 60
Gain (dB) 13
Supply Voltage (V) 28
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 20
Efficiency (%) 62
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 1.67
Package Name
Package Type Ceramic Flangeless

Datasheets

  cgh35060

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