CGH35240F

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CGH35240F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH35240F
Richardson RFPD #: CGH35240F
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGH35240F Data Sheet
EDA/CAD Models

CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3100
Maximum Frequency (MHz) 3500
Pout (W) 240
Gain (dB) 11.5
Supply Voltage (V) 28
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 300
Duty Cycle 20
Efficiency (%) 57
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.5
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh35240f

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